APTDF30H601G APTDF30H601G C rev 3 may, 2013 www.microsemi.com 1-5 absolute maximum ratings symbol parameter max ratings unit v r maximum dc reverse voltage 600 v v rrm maximum peak repetitive reverse voltage i f(av) maximum average forward current duty cycle = 50% t c = 25c 42 a t c = 90c 30 i fsm non-repetitive forward surge current 8.3ms t j = 45c 250 these devices are sensitiv e to electrostatic discharge. proper handling procedures should be followe d. see application note apt0502 on www.microsemi.com 5 3 6 cr2 cr1 12 4 cr4 cr3 10 8 79 all multiple inputs and outputs must be shorted together 3/4 ; 5/6 ; 7/8 ; 1/2 ; 9/10 v rrm = 600v i c = 30a @ tc = 90c application ? uninterruptible power supply (ups) ? induction heating ? welding equipment ? high speed rectifiers features ? ultra fast recovery times ? soft recovery characteristics ? high blocking voltage ? high current ? low leakage current ? very low stray inductance ? high level of integration benefits ? outstanding performance at high frequency operation ? low losses ? low noise switching ? solderable terminals for easy pcb mounting ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? rohs compliant fast diode full bridge power module downloaded from: http:///
APTDF30H601G APTDF30H601G C rev 3 may, 2013 www.microsemi.com 2-5 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit v f diode forward voltage i f = 30a 1.8 2.2 v i f = 60a 2.2 i f = 30a t j = 125c 1.5 i rm maximum reverse leakage current v r = 600v t j = 25c 250 a t j = 125c 500 c t junction capacitance v r = 200v 36 pf dynamic characteristics symbol characteristic test conditions min typ max unit t rr reverse recovery time i f = 30a v r = 400v di/dt = 200a/s t j = 25c 25 ns t j = 125c 160 q rr reverse recovery charge t j = 25c 35 nc t j = 125c 480 i rrm reverse recovery current t j = 25c 3 a t j = 125c 6 t rr reverse recovery time i f = 30a v r = 400v di/dt=1000a/s t j = 125c 85 ns q rr reverse recovery charge 920 nc i rrm reverse recovery current 20 a thermal and package characteristics sy mbol characteristic min t yp ma x uni t r thjc junction to case thermal resistance 1.2 c/w v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 175 c t stg storage temperature range -40 125 t c operating case temperature -40 100 torque mounting torque to heatsink m4 2 3 n.m wt package weight 80 g downloaded from: http:///
APTDF30H601G APTDF30H601G C rev 3 may, 2013 www.microsemi.com 3-5 typical performance curve 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duratio n t j =25c t j =125c 0 20 40 60 80 100 120 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v f , anode to cathode voltage (v) i f , forward current (a) forward current vs forward voltage i rrm vs. current rate of charge 15 a 30 a 60 a 0 5 10 15 20 25 30 0 200 400 600 800 1000 1200 -dif/dt (a/s) i rrm , reverse recovery current (a) t j =125c v r =400v trr vs. current rate of charge 15 a 30 a 60 a 50 75 100 125 150 175 0 200 400 600 800 1000 1200 -di f /dt (a/s) t rr , reverse recovery time (ns) t j =125c v r =400v q rr vs. current rate charge 15 a 30 a 60 a 0.0 0.5 1.0 1.5 0 200 400 600 800 1000 1200 -dif/dt (a/s) q rr , reverse recovery charge (c) t j =125c v r =400v capacitance vs. reverse voltage 0 25 50 75 100 125 150 175 200 1 10 100 1000 v r , reverse voltage (v) c, capacitance (pf) 0 10 20 30 40 50 25 50 75 100 125 150 175 case temperature (c) i f (av) (a) max. average forward current vs. case temp. duty cycle = 0.5 t j =175c downloaded from: http:///
APTDF30H601G APTDF30H601G C rev 3 may, 2013 www.microsemi.com 4-5 sp1 package outline (dimensions in mm) see application note 1904 - mounting instructions for sp1 power modules on www.microsemi.com downloaded from: http:///
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